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 UNISONIC TECHNOLOGIES CO., LTD 2SC2235
AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS
FEATURES
* Complimentary to UTC 2SA965
NPN SILICON TRANSISTOR
Lead-free: 2SC2235L Halogen-free: 2SC2235G
ORDERING INFORMATION
Ordering Number Normal Lead Free Halogen Free 2SC2235-X-T9N-B 2SC2235L-x-T9N-B 2SC2235G-x-T9N-B 2SC2235-x-T9N-K 2SC2235L-x-T9N-K 2SC2235G-x-T9N-K Package TO-92NL TO-92NL Pin Assignment 1 2 3 E C B E C B Packing Tape Box Bulk
www.unisonic.com.tw Copyright (c) 2009 Unisonic Technologies Co., Ltd
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NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( Ta=25C ,unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Emitter Current IE -800 mA Collector Power Dissipation PC 900 mW Junction Temperature TJ 150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25C,unless otherwise specified)
PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance SYMBOL VBCEO VBEBO ICBO IEBO hFE VCE(SAT) VBE fT Cob TEST CONDITIONS IC =10mA, IB=0 IE=1mA, IC =0 VCB=120V, IE=0 VEB=5V, IC=0 VCE=5V, IC =100mA IC =500mA, IB=50mA VCE=5V, IC =500mA VCE=5V, IC =100mA VCB=10V, IE=0,f=1MHz MIN 120 5 TYP MAX UNIT V V 100 nA 100 nA 240 1.0 V 1.0 V 120 MHz 30 pF
80
CLASSIFICATION OF hFE
RANK RANGE Y 120-240 O 80-160
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Collector Current vs. Collector Emitter Voltage 10 7 5 4 400 200 0 IB=1mA 0 0 2 4 6 8 10 12 14 Collector Emitter Voltage, VCE (V) Collector Emitter Saturation Voltage vs. Collector Current 3 2 DC Current Gain, hFE
NPN SILICON TRANSISTOR
DC Current Gain vs. Collector Current 1000 500 300 Common Emitter VCE=5V Ta=100C
1000 Collector Current, Ic (mA)
Common Emitter Ta =25C 15 800
600
100 50 30 10 3
Ta=25C Ta=-25C
10
30
100
300
1000
Collector Current, Ic (mA) Collector Current vs. Base Emitter Voltage Common Emitter VCE=5V
0.5 Collector Emitter Saturation Voltage, VCE(SAT)
Collector Current, Ic (mA)
Common Emitter 0.3 Ic/IB =10
800
600 Ta=100C Ta=25C Ta=-25C
0.1 0.05 0.03
Ta=100C
400
Ta=25C Ta=-25C
200
0.01
3
10
30
100
300
1000
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current, Ic (mA)
Base Emitter Voltage, VBE (V) Collector Power Dissipaton vs. Ambient Temperature
Safe Operating Area 3000 Collector Current, Ic (mA) 1000 500 300 100 50 30 10 5 3
*Single Nonrepetitive Pulse Ta=25C Curve must be derated linearly with increase in temperature
Ic Max.(Pulse) * Ic Max. (Continous)
1000 Collector Power Dissipaton, Pc (mW) 1ms * 10ms *
0m 10 s*
800 600 400 200 0
DC Operation
1 0.5 1
35
10 30 50 100 300 5001000
0
20
40
60
80
100 120 140 160
Collector Emitter Voltage, VCE (V)
Ambient Temperature, Ta (C)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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